Dinh Loc Duong
Assistant Professor of Physics
Frontier Institute for Research in Sensor Technologies (FIRST)
Office: 263 Barrows Hall
Phone: (207) 581-1217
Email: dinh.duong@maine.edu
Google Scholar Page (Dinh Loc Duong – Google Scholar)
ORCiD (Dinh Loc Duong (0000-0002-4118-9589) – ORCID)
Research Group Homepage (DUONG GROUP (google.com))
Education
B.S. Advanced Materials, Ho Chi Minh University of Technology, Vietnam, 2007
Ph.D. Nanoscience and Nanotechnology, Sungkyunkwan University, South Korea, 2012
Research Interests
Condensed Matter Physics – Material Physics – Material Simulation-Device Physics
The main aim of our research is to generate new multi-functional devices for the development of disruptive technologies based on the synthesis and exploration of unprecedented physics of novel materials. The focus is to synthesize novel materials to realize low-dissipation or dissipationless devices including magnetic semiconductors for low-power spintronics, magnetic oscillations (e.g., quantum Hall effects, quantum spin Hall effect) with a low magnetic field for a dissipationless current, and condensation (e.g., high-Tc superconductivity, BEC condensation, quantum spin liquids). These quantum phenomena usually appear at low temperatures, which impede the practical applications of these exotic physics. Therefore, our ambitious targets are to induce the quantum phenomena at room temperature and realize quantum devices operating in daily-life conditions.
Research
Current active research topics
- 2D Magnetism: Diluted Magnetic 2D Semiconductors and Devices
- Quantum Emitters in 2D Materials
- Spin-glass Materials for Stochastic Neural Computing
- Topological Materials and Superconductivity in Disorder Systems
- Quantum Entanglement in Condensed Matters (e.g., quantum spin liquid and glass)
Previous projects
- Ferromagnetic Semiconductor in V-doped WSe2
- Periodic Lattice Distortion and Superconductivity
- Graphene Transistors
- Large-area Single Crystal Graphene
- Hot Carrier and Multiple Exciton Generation in 2D Materials
Selected Publications
- Lan-Anh T. Nguyen, Jinbao Jiang, Tuan Dung Nguyen, Philip Kim, Min-Kyu Joo, Dinh Loc Duong, Young Hee Lee. Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide. Nature Electronics (2023) (https://www.nature.com/articles/s41928-023-01002-1).
(This work demonstrates the magnetic fluctuation in V-doped WSe2 and its possible application for probability bit toward probability computers)
- Seok Joon Yun, Dinh Loc Duong, Manh-Ha Doan, Kirandeep Singh, Thanh Luan Phan, Wooseon Choi, Young-Min Kim, Young Hee Lee. Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant. Sci. 7 (9), 1903076 (2020).
(This work demonstrates the long-range ferromagnetic order of a diluted doped 2D semiconductor at room temperature, answering the unsolved question in 50-year research of the field)
- Van Luan Nguyen, Dinh Loc Duong, Sang Hyub Lee, José Avila, Chaoyu Chen, Gyeongtak Han, Young-Min Kim, Maria C. Asensio, Se-Young Jeong, Young Hee Lee. In-situ formation of Cu-Si alloy assisted the thickness and stacking sequence-controlled of single-crystalline graphene films in wafer-scale. Nature Nanotechnology 15, 861–867 (2020).
(This work develops a new approach to the growth of uniform multilayer graphene with a well-defined stacking sequence using Cu-Si alloy)
- Dinh Loc Duong, Gang Hee Han, Fethullah Gunes, Seung Mi Lee, Eun Sung Kim, Sung Tae Kim, Heetae Kim, Quang Huy Ta, Kang Pyo So, Seok Jun Yoon, Seung Jin Chae, Young Woo Jo, Min Ho Park, Sang Hoon Chae, Seong Chu Lim, Jae Young Choi, Young Hee Lee. Probing graphene grain boundaries by optical microscope. Nature 490, 235 (2012) (US Patent)
(This work develops a new technique to observe the atomic scale defects and grain boundaries of graphene using optical microscopy)
- Roberto Urcuyo, Dinh Loc Duong, Marko Burghard, and Klaus Kern. Hot-carrier extraction from multilayer graphene. Nano Lett. 16, 6761 (2016) (Europe Patent)
(This work demonstrates a unique approach to extracting the hot carriers in graphene using the high-speed device based on metal-insulator-graphene heterostructure)